As reported previously, Samsung unveiled their 3rd generation 3D V-NAND and at their keynote, Samsung shared a few more details on the new NAND.
As expected, the 3rd generation 256Gb 3-bit 48-Layer MLC 3D V-NAND has 1.4x more density per wafer.
With the additional density is also additional performance and power efficiency. According to Samsung, their 48-layer 3-bit MLC 3D V-NAND produces up to 2x the performance sequential reads and 2.2x the performance sequential writes. Power efficiency is also significantly improved with reductions of up to 63% lower read and 54% write power consumption.
As presented before, Samsung believes that they can continue to stack NAND to over 100 layers, reaching 1Tb dies or greater.
Samsung is also extremely proud that the 256Gb 3rd generation 3-bit MLC 3D V-NAND is already in production. During the keynote, Samsung told the audience that they would be making a rolling change on the currently shipping Samsung 850 EVO with the new 3rd generation 3D V-NAND.
